The analysis of Germanium embedded in Metal-Oxide-Semiconductor Structure with different tunneling layer
Date Issued
2009
Date
2009
Author(s)
Yang, Zhang-Liang
Abstract
In order to improve the charge effect of non-volatile memory, we use the germanium nano-crystals (Ge NCs) and Si3N4 in order to improve the charge storage characteristic . Among the nano-crystals (Ge NCs),the charge are not storage in the continue floating-gate. Instead the charge are storage in the isolated germanium nano-crystals to avoid the charge loss of non-volatile memory. we use the Si3N4 as the tunneling layer to improve the charge amount of device . Afterwards we use the two advantage to fabricate the device. The device to be fabricated, we introduce some method to demonstrate that the Si3N4 as tunneling layer has more trap density than the SiO2 as tunneling layer. We use dc current ,ac current and Raman spectrum to analyze the germanium nano-crystals and to demonstrate the trap density of Si3N4 as tunneling layer can improve the charge characteristic. The direct current versus time can indirect to match our trap theory .The charge storage characteristics of our samples are investigated with the C-V hystereses. The frequency-dependent C-V and conductance-voltage (G-V) experiments are further introduced to study the interface traps and the traps induced by the NCs formation. According to these experiment , we make use of the Characteristic time constant and trap density A to verify that the trap of Si3N4 as tunneling layer can help the carrier transport to the germanium nano-crystals and to gain the charge storage of the device.
Subjects
Si3N4
Ge NCs
Raman
hysteresis curve
trap capacitance
trap conductance
Type
thesis
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ntu-98-R95943123-1.pdf
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