MBE - Enabling technology beyond Si CMOS
Journal
Journal of Crystal Growth
Journal Volume
323
Journal Issue
1
Pages
511-517
Date Issued
2011
Author(s)
Abstract
Achievement of low interfacial densities of states, small equivalent oxide thickness, high κ values, and thermal stability at high temperatures in the high κ dielectrics on high carrier mobility semiconductors, the leading candidates for technology beyond Si CMOS, has been made using MBE. This paper reviews our recent advances in meeting the unprecedented demands in materials and physics for the new technology. Moreover, self-aligned inversion-channel InGaAs and Ge MOSFETs using MBE-Ga2O 3(Gd2O3) as the gate dielectric are compared favorably with those using the gate dielectrics made from other thin film techniques. © 2010 Elsevier B.V. All rights reserved.
SDGs
Type
journal article