Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature

Resource

Electronics Letters

Journal

Electronics Letters

Pages

-

Date Issued

1992-10

Date

1992-10

Author(s)

Kuo, J.B.

Sim, J.H.

DOI

0013-5194

URI

Type

journal article

File(s)

Name

00170875.pdf

Size

212.1 KB

Format

Adobe PDF

Checksum

(MD5):2f28cabab561e261f2d8626842957069