A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS
Journal
IEEE Microwave and Wireless Components Letters
Journal Volume
21
Journal Issue
11
Pages
610--612
Date Issued
2011-11
Author(s)
Abstract
A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.
SDGs
Type
journal article