Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

Journal

Semiconductor Science and Technology

Journal Volume

21

Journal Issue

4

Pages

479-485

Date Issued

2006

Author(s)

Chen, P.S.

Lee, S.W.

Lee, M.H.

DOI

10.1088/0268-1242/21/4/011

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/502103

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-33644974360&doi=10.1088%2f0268-1242%2f21%2f4%2f011&partnerID=40&md5=4064b36f0a27e7a61f53ff9a53401ddc

Type

journal article