Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-κ Dielectrics Featuring High ION per Footprint of 4800 μA/μm at VOV=VDS=0.5V
Journal
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
ISBN
9798350334166
Date Issued
2023-01-01
Author(s)
Abstract
The peak dielectric constant of 47 is obtained with Hf0.2Zr0.8O2. The Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current by taking advantage of the high dielectric constant. The stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per footprint of 4800 μ A μ m at VOV= VDS=0.5 V. The thermal budget is as low as 450 °C.
Type
conference paper