The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO
Journal
IEEE Photonics Journal
Journal Volume
7
Journal Issue
2
Date Issued
2015
Author(s)
Abstract
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO. © 2015 IEEE.
Subjects
II-VI semiconductor materials; Optical films; optical polarization; photoluminescence; strain
Other Subjects
Anisotropy; Films; Light polarization; Optical films; Photoluminescence; Polarization; Semiconductor materials; Strain; Zinc oxide; Effect of strain; Emission anisotropy; Emission peaks; Ii - vi semiconductor materials; Near band edge emissions; Polarization degree; Polarized state; Temperature dependencies; Tensile strain
Type
journal article