Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"
Journal
IEEE Transactions on Electron Devices
Journal Volume
62
Journal Issue
4
Pages
1360-
Date Issued
2015
Author(s)
Abstract
In our original work [1] , we demonstrated the usage of N-IMP in STI SiO 2 to relax the compressive stress in the n-MOSFETs and further improve the core device performance accordingly. We wish to offer an apology for the typo in the original work and want to provide the new data/findings in the erratum paper.
Type
other