Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"

Journal

IEEE Transactions on Electron Devices

Journal Volume

62

Journal Issue

4

Pages

1360-

Date Issued

2015

Author(s)

Liao, M.-H.

Chen, C.H.

Chang, L.C.

Yang, C.

DOI

10.1109/TED.2015.2405334

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/447958

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028167275&doi=10.1109%2fTED.2015.2405334&partnerID=40&md5=164034559fa8e2f73f89391d52ce7842

Type

other