Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
10
Date Issued
2007
Author(s)
Abstract
A cost-effective method of shadow evaporation of aluminum is adopted to prepare ultrathin aluminum film. The formation of different thicknesses of aluminum film on one wafer was demonstrated. The mask sheltered the wafer from the pure aluminum source to achieve ultrathin aluminum film. Aluminum oxide (Al2O3) was obtained by nitric acid oxidation of the evaporated aluminum directly at room temperature. In this work, the leakage current in the sample of equivalent oxide thickness of 2nm is one order of magnitude reduction in comparison with that in the conventional thermal SiO2 sample and the charge trapping phenomenon is not obvious.
SDGs
Type
journal article