Investigation of degradation in beryllium chalcogenide II-VI semiconductors
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
12
Date Issued
2006
Author(s)
Tsai, W.C.
Cheng, C.L.
Chen, T.T.
Huang, Y.S.
Firszt, F.
Męczyńska, H.
Marasek, A.
Łęgowski, S.
Strzakołwski, K.
Abstract
The wurtzite-type Cd1−x−yZnxBeySe crystals grown by the high-pressure Bridgman method were investigated to obtain the suitable beryllium composition for improving the lifetime of II-VI based optoelectronic devices. A method based on the continuous exposure of the electron beam of cathodoluminescence measurement was introduced to probe the aging characteristics of optoelectronic materials. The results show that in order to improve the degradation problem, the incorporation of beryllium content in II-VI compounds should be less than 10%. In addition, the authors demonstrate that cathodoluminescence image is a very powerful tool to reveal the generation of defects of an optoelectronic solid under external perturbation.
SDGs
Type
journal article