Microwave and Millimeter-Wave Balun Design and Applications
Date Issued
2006
Date
2006
Author(s)
Wu, Pei-Si
DOI
en-US
Abstract
The purpose of this dissertation is to develop microwave and millimeter-wave baluns and their applications using commercial standard GaAs based HEMT and Si based CMOS MMIC processes.
Four planar and five multi-layer transformer baluns are presented in this dissertation. The coupled-line equivalent models are used to synthesis the initial design of the planar transformer baluns up to 50 GHz. Four singly balanced diode mixers using these for planar transformer baluns are implemented using commercial GaAs 0.15 um HEMT processes. The chip sizes of these MMICs are all within 0.3 mm2 and two of these circuits achieve bandwidths of 100% and 105% between 10 to 45 GHz.
Two new phase/amplitude control MMICs using vector sum method are proposed and implemented employing 0.18 um CMOS technology. The analysis, design equations, and building blocks of these two circuits are developed. These two MMICs demonstrate 360° continuous phase and amplitude control with 37 dB dynamic ranges from 15 to 20 GHz, the chip sizes are 0.72 and 0.58 mm2.
A modified Marchand balun is designed using multiple air-bridges, and used in a singly balanced diode mixer and 77 GHz automotive radar system at last. These two circuits are implemented using GaAs 0.15-um HEMT process. The broadband diode mixer achieves conversion loss of better than 10 dB from 46 to 78 GHz and the chip size is only 0.57 mm × 0.52 mm. The single 77 GHz transceiver chip with 3 × 2 mm chip size combines a 19.25 to 77 GHz quadrupler, a buffer amplifier, two medium power amplifiers, two switches, a low noise amplifier, and a fundamental mixer. It features a 7.9-dBm RF output power at 77 GHz in the transmitting mode, and the receiver has a conversion loss of 0.7 dB with RF frequency of 77.05 GHz and IF frequency of 50 MHz.
Four planar and five multi-layer transformer baluns are presented in this dissertation. The coupled-line equivalent models are used to synthesis the initial design of the planar transformer baluns up to 50 GHz. Four singly balanced diode mixers using these for planar transformer baluns are implemented using commercial GaAs 0.15 um HEMT processes. The chip sizes of these MMICs are all within 0.3 mm2 and two of these circuits achieve bandwidths of 100% and 105% between 10 to 45 GHz.
Two new phase/amplitude control MMICs using vector sum method are proposed and implemented employing 0.18 um CMOS technology. The analysis, design equations, and building blocks of these two circuits are developed. These two MMICs demonstrate 360° continuous phase and amplitude control with 37 dB dynamic ranges from 15 to 20 GHz, the chip sizes are 0.72 and 0.58 mm2.
A modified Marchand balun is designed using multiple air-bridges, and used in a singly balanced diode mixer and 77 GHz automotive radar system at last. These two circuits are implemented using GaAs 0.15-um HEMT process. The broadband diode mixer achieves conversion loss of better than 10 dB from 46 to 78 GHz and the chip size is only 0.57 mm × 0.52 mm. The single 77 GHz transceiver chip with 3 × 2 mm chip size combines a 19.25 to 77 GHz quadrupler, a buffer amplifier, two medium power amplifiers, two switches, a low noise amplifier, and a fundamental mixer. It features a 7.9-dBm RF output power at 77 GHz in the transmitting mode, and the receiver has a conversion loss of 0.7 dB with RF frequency of 77.05 GHz and IF frequency of 50 MHz.
Subjects
平衡不平衡轉換器
微波單晶積體電路
砷化鎵
互補式金氧半場效電晶體
balun
MMIC
GaAs
CMOS
HEMT
Type
thesis
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