Broadband semiconductor optical amplifiers and tunable semiconductor lasers
Resource
Proceedings of SPIE 5248: 218-226
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
5248
Pages
218-226
Date Issued
2003
Date
2003
Author(s)
Abstract
Nonidentical multiple quantum wells (MQWs) had been widely used for broadening the emission or gain bandwidth of semiconductor optical amplifiers (SOAs). However, the carrier distribution among the MQWs is not uniform, leading to nonuniform gain contributed from different QWs. Thus using nonidentical MQWs for broadband purpose is not intuitively straightforward. Several factors need to be carefully considered. Those factors include the QW sequence, electron/hole transport time across the separate confinement hetero-structure, as well as carrier capture time. In this work, we will discuss the design of MQWs for broadband SOAs. With properly designed nonidentical MQWs, the emission bandwidth could be nearly 400 nm. Also, the tuning range of semiconductor lasers could be extended to be over 200 nm.
Subjects
Broadband; Carrier distribution; Emission bandwidth; Nonidentical multiple quantum wells; Quantum-well sequence; Semiconductor optical amplifiers; Separate confinement hetero-structure
Other Subjects
Bandwidth; Broadband amplifiers; Electromagnetic wave emission; Electron transport properties; Heterojunctions; Optical communication; Semiconductor lasers; Semiconductor quantum wells; Spectroscopy; Tomography; Carrier distribution; Emission bandwidth; Nonidentical multiple quantum wells; Quantum well-sequence; Semiconductor optical amplifiers; Separate confinement hetero-structure; Light amplifiers
Type
conference paper
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