Modeling the Parasitic Bipolar Device in the 40nm PD SOI NMOS Device Considering the Floating Body Effect
Date Issued
2010
Date
2010
Author(s)
Chen, Chia-Hsing
Abstract
This thesis reports modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during DC and transient operations could be modeled.
During the turn-on transient by imposing a step voltage from 0V to 2V at the gate, the case with a slower rise time shows a faster turn-on in the drain current due to a stronger function of the parasitic bipolar device from smaller displacement currents through the gate oxide, as reflected in the current gain, as verified by the experimentally measured results.
During the turn-off transient by imposing a step voltage from 2V to 0V at the gate, the case with a faster fall time shows a faster turn-off in the drain current due to a stronger function of the parasitic bipolar device. With a slower fall time shows a bigger multiplication factor imply stronger impact ionization , Verified by the experimentally measured data and the 2D simulation results, Chapter 4 is conclusion and future work.
Subjects
transient analysis
Parasitic Bipolar Device
SOI MOS
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