HZO MFM with Record 45μC/cm 2 2P r @ ≤3nm, Record 60 2P r /V op , and Record >8E12 Endurance by β-W Electrodes and Initial Solid Phase Epitaxy with 1.2V NVSRAM Applications
Journal
Technical Digest - International Electron Devices Meeting, IEDM
Start Page
1
End Page
4
ISSN
01631918
ISBN (of the container)
979-833156785-9
Date Issued
2026-01-30
Author(s)
Liao, Yu-Tsung
Liang, Jhih-Yuan
Chou, Tao
Chen, Guan-Hua
Chen, Yun-Wen
Chen, Yu-Rui
Chen, Wei-Jen
Lin, Min-Kuan
Chen, Yan-Jyun
Chen, Yu-An
Yu, Bo-Hui
Fujiwara, Hidenari
Liu, Ming-Chang
Lin, Kuan-Heng
Lee, Dai-Ying
Lee, Ming-Hsiu
Abstract
The leakage current (2.6E-2A/cm2±0.75V) of 3nm HZO metal-ferroelectric-metal (MFM) capacitor is reduced by 4 orders of magnitude using water quenching and H2 plasma due to the diffusion suppression of β-W electrode into HZO. Initial solid phase epitaxy (ISPE) enhances remanent polarization (2Pr) by 40%, achieving record high 2Pr of 45μC/cm2 for the thickness ≤3nm and record high 2Pr/Vop ratio of 60 among all MFMs. At 0.75V operating voltage for major loops, the 3nm HZO capacitor achieves record fatigue-free endurance exceeding 8E12 cycles with final 2Pr of 45μC/cm2. Even at lower Vop of 0.55V, 2Pr of 29μC/cm2 larger than the 2023 IRDS target is maintained after 8E12 cycle endurance. 3.5nm HZO MFM capacitors with low coercive voltage (2Vc) of 1.4V and 2Pr of 27μC/cm2 are integrated into non-volatile SRAM (NVSRAM) cells. The reliable non-volatile recall voltage is as low as 1.2V with the store voltage of 1.2V.
Event(s)
2025 IEEE International Electron Devices Meeting, IEDM 2025
Publisher
IEEE
Type
conference paper