High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's

Journal

International Conference on Indium Phosphide and Related Materials

Pages

396-399

Date Issued

1997

Author(s)

Lin, Yo-Sheng

DOI

10.1109/ICIPRM.1997.600177

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0030680390&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/332343

http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910031843/1/00600177.pdf

SDGs

[SDGs]SDG7

Type

conference paper

File(s)

Name

00600177.pdf

Size

341.25 KB

Format

Adobe PDF

Checksum

(MD5):6afef90ae0b8dbf332e1cf0c1db11952