High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's
Journal
International Conference on Indium Phosphide and Related Materials
Pages
396-399
Date Issued
1997
Author(s)
Lin, Yo-Sheng
Abstract
The first Ga/sub 0.51/In/sub 0.49/P/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.22) doped-channel FETs (DCFETs) grown by GSMBE exhibiting excellent dc and microwave characteristics were successfully fabricated. A high g/sub m/ of 306 mS/mm, a high f/sub t/ of 21.7 GHz and a high f/sub max/ of 53.4 GHz were achieved at 300 K for a Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As DCFET with a 1 /spl mu/m-long gate. This device also showed a very high maximum current density (630 mA/mm) and a very high drain-source operating voltage (13 V). Moreover, wide and flat characteristics of g/sub m/, f/sub t/, and f/sub max/ versus drain current (or gate voltage) were attained for all DCFETs. Power performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As DCFETs, Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As DCFETs and HEMTs were calculated. It is found that Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As DCFETs provides the largest power among the three devices. These results demonstrate that high transconductance, high linearity, high speed and high output-power can be achieved by using In/sub x/Ga/sub 1-x/As and Ga/sub 0.51/In/sub 0.49/P as the channel and insulator materials, respectively.
SDGs
Type
conference paper
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