Novel method for monitoring the surface roughness during molecular beam epitaxy
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
36
Journal Issue
3 SUPPL. A
Pages
984-986
Date Issued
1997
Author(s)
Lin R.-M
Abstract
A novel in situ method to monitor the InAs epilayer surface roughness by using pyrometer reading is proposed. The variation of pyrometer reading can be related to the surface morphology of the InAs epilayer deposited on GaAs, and provides an easy way for rapid calibration of growth conditions. The atomic force microscope is applied to measure the surface roughness which verifies the correlation between InAs epilayer morphology and the pyrometer reading.
Subjects
InAs; Molecular beam epitaxy; Pyrometer; Surface morphology
SDGs
Other Subjects
Surface morphology monitoring; Atomic force microscopy; Epitaxial growth; Heat radiation; Molecular beam epitaxy; Morphology; Pyrometers; Semiconducting gallium arsenide; Substrates; Surface roughness; Semiconducting indium compounds
Type
journal article