Electronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes
Journal
Journal of Applied Physics
Journal Volume
105
Journal Issue
3
Pages
033717
Date Issued
2009-02
Author(s)
Abstract
The origins of barrier lowering leading to high efficient organic light emitting devices with incorporation of molybdenum oxide (MoOx) in anode structures are investigated. Ultraviolet and x-ray photoemission spectra reveal that p -type doping effects in the organic films and carrier concentration increase at the anode interfaces cause the hole injection barrier lowering. The gap states, which help carrier injection from the anodes, resulted from the oxygen deficiency in MoOx due to the interaction of organic materials and MoOx. © 2009 American Institute of Physics.
SDGs
Other Subjects
Carrier concentration; Chemical properties; Civil aviation; Doping (additives); Electron injection; Emission spectroscopy; Hole concentration; Hole traps; Lanthanum compounds; Light emission; Light emitting diodes; Molybdenum; Molybdenum compounds; Oxygen; Barrier lowering; Carrier injections; Doped holes; Gap state; Hole-injection barriers; Molybdenum oxides; Organic films; Organic light-emitting; Organic light-emitting devices; Organic materials; Oxygen deficiencies; P-type doping; X-ray photoemission spectrum; Organic light emitting diodes (OLED)
Type
journal article