A-plane sapphire: A well-matched substrate for epitaxial growth of indium tin oxide
Journal
Thin Solid Films
Journal Volume
515
Journal Issue
20-21
Pages
7866-7869
Date Issued
2007
Author(s)
Abstract
Indium tin oxide (ITO) thin films were grown on the (112-0) surface of sapphire using fast-pulse laser deposition. It was found that when the oxygen pressure was above 2.66 Pa, the growth was epitaxial with the [111] direction perpendicular to the substrate. The epitaxial relation and crystal quality were evaluated by using high-resolution X-ray diffraction, which showed distinct pendellösung oscillations in θ-2θ scan of the ITO(222) reflection. The in-plane orientation relationship, ITO [33-0]//Al2O3 [5-501] and ITO [1-/4,3-/4,1]//Al2O3 [0001], was identified by X-ray φ{symbol} scan, where no other domains with different orientations could be detected. Good values of mobility, > 30 cm2/Vs, and resistivity, ∼ 2 × 10- 4 Ω cm, were measured by the Hall and van der Pauw methods at room temperature. © 2007 Elsevier B.V. All rights reserved.
Type
journal article