Novel Vertically-Stacked Tensily-Strained Ge<inf>0.85</inf>Si<inf>0.15</inf> GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and I<inf>on</inf>/I<inf>off</inf>=1.2E7

Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with SS=76mV/dec, DIBL=36mV/V, and Ion/Ioff=1.2E7

Journal

2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Date Issued

2019

Author(s)

Huang, Y.-S.

Lu, F.-L.

Ye, H.-Y.

Tsou, Y.-J.

Liu, Y.-C.

Tu, C.-T.

DOI

URI

Type

conference paper