Optical response from lenslike semiconductor nipple arrays
Journal
Applied Physics Letters
Journal Volume
93
Journal Issue
21
Pages
211903
Date Issued
2008-11
Author(s)
Abstract
The authors reported the use of recessive size reduction in self-assembled polystyrene sphere mask with anisotropic etching to form lenslike nipple arrays onto the surface of silicon and gallium nitride. These devices are shown to exhibit a filling factor near to an ideal close-packed condition and paraboloidlike etch profile with slope increased proportionally to the device aspect ratio. Specular reflectivity of less than 3% was observed over the visible spectral range for the 0.35-μm -period nipple-lens arrays. Using two-dimensional rigorous coupled-wave analysis, the latter phenomenon can be ascribed to a gradual index matching mechanism accessed by a high surface-coverage semiconductor nipple array structure. © 2008 American Institute of Physics.
Other Subjects
Aspect ratio; Electric conductivity; Gallium alloys; Gallium compounds; Gallium nitride; Nitrides; Polystyrenes; Semiconducting silicon; Semiconducting silicon compounds; Semiconductor materials; Silicon; Two dimensional; Array structures; Etch profiles; Filling factors; Index matching; Lens arrays; Optical responses; Polystyrene spheres; Semi-conductors; Size reductions; Specular reflectivities; Visible spectral ranges; Wave analyses; Semiconducting gallium
Type
journal article