Extremely broadband tunable semiconductor lasers for optical communication
Resource
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Journal
Conference on Lasers and Electro-Optics Europe
Pages
237-238
Date Issued
May-01
Date
May-01
Author(s)
DOI
N/A
Abstract
Summary form only given. Sumary form only given. Broadband characteristics are important for optical communication. This work reports the study on the design of MQWs for broadband semiconductor lasers/amplifiers. The study shows that, with properly designed sequence of nonidentical MQWs made of InGaAsP/InP materials, the emission bandwidth could be nearly 300 nm. Using the designed MQWs as the laser gain material, the external-cavity semiconductor laser exhibits an extremely broadband tuning range, covering from 1300 nm to 1540 nm.
SDGs
Type
conference paper
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