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College of Science / 理學院
Applied Physics / 應用物理研究所
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
Details
InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric
Journal
ECS Transactions
Journal Volume
19
Journal Issue
5
Pages
351-360
Date Issued
2009
Author(s)
Lin, TD
Chiu, HC
Chang, P
Lee, WC
Chiang, TH
Kwo, JR
Tsai, W
MINGHWEI HONG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/349413
Type
journal article
