Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers
Journal
IEEE Photonics Technology Letters
Journal Volume
10
Journal Issue
3
Pages
415-417
Date Issued
1998
Author(s)
Rieh, J.-S.
Klotzkin, D.
Qasaimeh, O.
Lu, L.-H.
Yang, K.
Katehi, L.P.B.
Bhattacharya, P.
Croke, E.T.
Abstract
Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with fT = 23 GHz and fmax = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at λ = 850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB·Ωand bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
SDGs
Type
journal article