High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy
Resource
International Conference on Solid State Devices and Materials (SSDM), Tsukuba Science City, Japan
Journal
International Conference on Solid State Devices and Materials, SSDM
Pages
-
Date Issued
1992
Date
1992
Author(s)
Description
Tsukuba Science City, Japan
Type
conference paper