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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
Details
Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device
Journal
IEDMS
Date Issued
2014-11
Author(s)
S. K. Hu
D. H. Lung
J. B. Kuo
D. Chen
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/388604
Type
conference paper
