Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride
Resource
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Journal
Conference on Lasers and Electro-Optics Europe - Technical Digest
Pages
153
Date Issued
1998-05
Date
1998-05
Author(s)
DOI
N/A
Abstract
The use of deep ultraviolet irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium is nitride is presented. Study indicates that the hydration effect plays an important roles in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide and phosphorous acid solutions at pH = 14.25 and 0.75, respectively.
Event(s)
Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
Other Subjects
Etching; Hydration; Irradiation; Mathematical models; Oxidation; pH; Phosphoric acid; Photochemical reactions; Potassium compounds; Reaction kinetics; Solutions; Ultraviolet radiation; Energy dispersion x ray analysis; Gallium nitride; Hydration model; Peaking effect; pH dependence; Photoelectrochemical etching; Potassium hydroxide; Wet chemical etching; Semiconducting gallium compounds
Type
conference paper
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