The Investigation of Polycrystalline Germanium on Insulator Based on SOI and Si Substrates
Date Issued
2011
Date
2011
Author(s)
Lin, Chung-Wei
Abstract
Traditional silicon technology is mature and widespread in application nowadays. Therefore, silicon is the main material in semiconductor industry. But by the limit of physics, silicon technology will finally face that it cannot reduce its scale in order to pursue high speed and low cost. Consequently, germanium as group IV as silicon is developed in this thesis. Its advantages are high mobility and larger absorption at communication wavelength than silicon. As a result, it can be combined with traditional silicon technology in order to develop more high-speed devices.
In this thesis, we developed poly-germanium on insulator (GOI) by SOI and Si substrates using a low-cost liquid phase epitaxy (LPE) method. Its principle is to anneal Ge above its melting point, and cool it rapidly in order to achieve recrystallization.
We have acquired 300-nm-thick and 100-nm-thick poly-GOI respectively by two different methods in this study. Their patterns were 5μm×5μm and 10μm×10μm square arrays. In addition, we have also acquired 300-nm-thick strip GOI. By the method, it is expected to be integrated to Si substrates for new devices, such as photodetectors. Therefore, this investigation is one of the important development trends for semiconductor industry.
Subjects
Ge
Germanium on Insulator (GOI)
Liquid-Phase-Epitaxy (LPE)
Type
thesis
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