Reduction of radiation-induced degradation in n-channel metal-oxide-semiconductor field-effect transistors (MOSFET's) with gate oxides prepared by repeated rapid thermal N2O annealing
Journal
Japanese Journal of Applied Physics, Part 2: Letters
Journal Volume
33
Journal Issue
7 A
Date Issued
1994
Author(s)
Abstract
Repeated rapid thermal N2O annealing is proposed as a new gate oxide preparation method for n-channel metal- oxide-semiconductor field-effect transistors (n-MOSFET’s). It is found that the n-MOSFET’s with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N2O -annealed gate oxides. © 1994 IOP Publishing Ltd.
Subjects
Gate oxide; MOSFET; N2O annealing; Radiation hardness; Rapid thermal annealing
Other Subjects
Annealing; Degradation; Diffusion; Gates (transistor); Nitrogen; Oxides; Radiation; Semiconductor growth; Field effect mobility; Gate oxide preparation; Radiation hardness; Radiation induced degradation; Rapid thermal annealing; Transconductance; MOSFET devices
Type
journal article