Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures
Resource
Applied Physics Letters, v.64, p.3314-3316
Journal
Applied Physics Letters
Journal Volume
v.64
Pages
3314-3316
Date Issued
1994
Date
1994
Author(s)
Abstract
We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.
Other Subjects
Aluminum; Calculations; Composition effects; Curve fitting; Electric fields; Electron energy levels; Energy gap; Molecular beam epitaxy; Oscillations; Franz Keldysh oscillations; Photoreflectance; Schottky barrier; Surface Fermi level; Surface intrinsic structures; Semiconducting indium compounds
Type
journal article