Carrier-gain dynamics in InxGa1-xAs/AlyGa1-yAs strained-layer single-quantum-well diode lasers: Comparison of theory and experiment
Journal
Physical Review B
Journal Volume
50
Journal Issue
12
Pages
8539-8558
Date Issued
1994
Author(s)
Abstract
We present measurements and calculations of femtosecond gain dynamics in InxGa1-xAs/AlyGa1-yAs strained-layer single-quantum-well diode lasers using a multiple-wavelength pump-probe technique. To aid in the interpretation of gain dynamics induced by both interband absorption and stimulated emission of photons, we develop a detailed theoretical model for gain dynamics in quantum-well laser diode structures and compare it with experimental measurements. In the model, transient gain and differential transmission are computed in a multiband effective-mass model including biaxial strain, valence subband mixing, and polar-optical-phonon scattering both within and between subbands. Transient photogeneration of electron-hole pairs by the pump pulse and subsequent relaxation of carriers by polar-optical-phonon scattering are calculated in a Boltzmann-equation framework. © 1994 The American Physical Society.
SDGs
Type
journal article