Low Temperature Growth of Aligned Carbon Nanotubes in Large Area
Journal
International Journal of Modern Physics B
Journal Volume
16
Journal Issue
6 & 7
Pages
853-859
Date Issued
2002
Author(s)
Abstract
We have synthesized well-aligned, uniform carbon nanotubes (CNTs) in large area at low temperature of 500°C using microwave plasma- enhanced chemical vapor deposition on silicon and Corning glass 7059. This is a two-step process in that ion beam sputtering deposition was used to deposit iron catalyst thin films and followed by hydrogen plasma pretreatment to form nano-size Fe particles before the CNTs growth at the second step. The thickness of Fe catalyst thin film was found to be the most important factor in the low temperature CNTs growth process. Systematic control of the length, diameter, and alignment of the CNTs has been achieved by changing the deposition parameters such us microwave power, pressure, temperature and the thickness of Fe catalyst. High resolution SEM and TEM were used to characterize the morphology and structure of the nanotubes. Field emission measurement showed a low turn on field (6.2 V/m) and high emission current density (0.1 mA/cm 2 at 9 V/m) for the films grown at low temperature of 500°C.
Publisher
World Scientific Publishing Co Pte Ltd
Type
journal article
