Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Journal
Optical Materials Express
Journal Volume
12
Journal Issue
3
Pages
1131-1139
Date Issued
2022
Author(s)
Abstract
High quality 940 nm AlxGa1-xAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology and reasonable periodicity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for larger scale production of AlGaAs-based VCSELs. © 2022 Optica Publishing Group.
Other Subjects
Aluminum alloys; Aluminum gallium arsenide; Distributed Bragg reflectors; Gallium alloys; Gallium arsenide; Germanium; III-V semiconductors; Monolithic integrated circuits; Reflection; Semiconductor alloys; Distributed-bragg-reflectors; GaAs substrates; Ge substrates; Ge(100); High quality; Large scale productions; Monolithic integration; Off-cuts; Reflectivity spectra; Substrates
Type
journal article