180-220 GHz MMIC amplifier using 70-nm GaAs MHEMT technology
Journal
IEEE International Symposium of Radio Frequency Integrated Technology
Pages
334–339
Date Issued
2016
Author(s)
Abstract
In this paper, we present an MMIC amplifier for the frequency range of 180 to 220 GHz. This amplifier is fabricated using a 70-nm GaAs mHEMT technology. It is a 5-stage amplifier in common-source topology. On-wafer probing shows over 20 dB small-signal gain from 173 to 220 GHz with peak gain of 32 dB at 188 GHz. Saturation output power level of -1 dBm and 1-dB gain compression output power level of -3 dBm are achieved.
SDGs
Type
conference paper