A Four-Port Model of Light-Emitting Transistors for Circuit Simulation and Application
Journal
IEEE Transactions on Electron Devices
Journal Volume
67
Journal Issue
12
Pages
5572-5580
Date Issued
2020
Author(s)
Abstract
Starting from the device physics, we construct the model of light-emitting transistors (LETs) for the simulation and application in optoelectronic integrated circuits and electronic design automation. Our model contains the essential features of LETs relevant to the device operation and can properly describe the electrical-to-electrical and electrical-to-optical properties of LETs. An admittance matrix is also presented for general simulations of modulation responses, such as scattering parameters and current gains in common-emitter, common-collector, and common-base configurations. The large-signal eye diagrams of LETs on circuit simulator are also demonstrated for the simulation program with integrated circuit emphasis (SPICE) compatibility. Our model can help circuit designers to evaluate the circuit performance and speed up the design process. ? 1963-2012 IEEE.
Subjects
Computer aided design; Computer aided software engineering; Integrated circuit design; Integrated circuits; Light emission; Optical properties; Phototransistors; Timing circuits; Admittance matrices; Circuit performance; Circuit simulators; Common base configuration; Electrical-to-optical; Light-emitting transistors; Modulation response; Simulation program with integrated circuit emphasis; SPICE
SDGs
Type
journal article