Molecular dynamics study of copper trench filling in damascene process
Journal
Materials Science in Semiconductor Processing
Journal Volume
8
Journal Issue
5
Pages
587-601
Date Issued
2005
Author(s)
Abstract
The trench filling of depositing copper atoms on the titanium layer in a damascene process was studied using molecular dynamics simulation with the embedded atom method (EAM) as interaction potential for the present alloy metal system. A three-layer trench model consisting of the barrier, thermal control, and fixed layers was used. The effects of different process parameters on the trench-filling morphologies and microstructures including incident energies of depositing atoms and substrate temperatures were investigated. The present results using invariance-preserving alloy model are discussed in terms of void formation, coverage percentage, and alloy fraction and compared with simple arithmetic average alloy model. © 2005 Elsevier Ltd. All rights reserved.
Type
journal article