High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited)
Journal
ECS Transactions
Journal Volume
61
Journal Issue
2
Pages
393-397
Date Issued
2014
Author(s)
Abstract
In-situ atomic layer deposited (ALD)-HfO2 has been used to passivate In0.53Ga0.47As. Atom-to-atom interactions for the interfacial electronic/ chemical characteristics of in-situ ALD-HfO2 on pristine molecular beam epitaxy (MBE) grown In0.53Ga0.47As surface have been studied using synchrotron-radiation photoemission (SRPES). ALD-HfO2/ In0.53Ga0.47As.47As metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited excellent capacitance-voltage (C-V) characteristics. The interfacial trap density spectra in absence of mid-gap peaks were attained. Moreover, 1μm-gate-length self-aligned inversion-channel I In0.53Ga0.47As MOS field-effect-transistors (MOSFETs) using in-situ ALD-HfO2 as the gate dielectric have achieved record-high maximum drain current (ID) of 1.5 mA/μm and peak transconductance (Gm) of 0.84 mS/μm. Moreover, low contact resistivity (ρc) of 6.7×10-9 ω-cm2 by inserting a 0.6 nm ZnO dielectric layer between titanium metal and InGaAs (with Si doping concentration of 1.5×1019 cm-3) has been demonstrated; this contact structure was employed in the source/drain on the implant-free In0.53Ga0.47As quantum-well MOSFETs to obtain peak Gm of 1.25 mS/μm and low source/drain resistance of 190 ω- μm.
Type
conference paper