Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
Journal
Solid-State Electronics
Journal Volume
45
Journal Issue
9
Pages
1679-1682
Date Issued
2001
Author(s)
Abstract
The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV. © 2001 Elsevier Science Ltd. All rights reserved.
The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV. © 2001 Elsevier Science Ltd. All rights reserved.
SDGs
Type
journal article