Fabrication and device characterization of large linear dynamic range tunnel magnetoresistance (TMR) sensors for system applications
Journal
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Pages
104-105
Date Issued
2020
Author(s)
Abstract
The large linear dynamic range tunnel magnetoresistance (TMR) sensors were designed and successfully fabricated in 8 inch Silicon process line for current / magnetic sensing applications. In this paper, the TMR sensors show their performances strongly depend on wafer etching conditions and aspect ratios (ARs) of magnetic tunnel junctions (MTJs). During the fine-tuning of etching conditions and AR of MTJs, the packaged TMR sensors have large linear dynamic range ( 200 Oe) and suitable characteristics to apply in current measurement system. ? 2020 IEEE.
Subjects
Aspect ratio; Etching; Fabrication; Silicon wafers; Tunnel junctions; Tunnelling magnetoresistance; VLSI circuits; Device characterization; Etching condition; Linear dynamic ranges; Magnetic tunnel junction; Sensing applications; Silicon process; System applications; Tunnel magnetoresistance; Magnetic devices
Type
conference paper