Numerical Study of Scaling Issues in Graphene Nanoribbon Transistors
Date Issued
2011
Date
2011
Author(s)
Chen, Man-Tieh
Abstract
This paper addresses scaling issues in graphene nanoribbon transistors (GNRFETs) by using two-dimensional (2-D) Poisson and drift-diffusion solver with finite element method (FEM). GNRFETs with the back-gated control and the channel width down to less than 5nm have been reported to have Ion/Ioff ratio up to 1E6. Our simulations show an agreement with the published experimental work and show a potential to reach unity current gain cut off frequency, fT, up to more than 1THz with a satisfying Ion/Ioff ratio at the same time. This makes GNRFETs promising for logic applications.
Subjects
Graphene
Graphene nanoribbon
Unity current gain cut off frequency
High speed transistor
Finite element method
Type
thesis
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