4.3 GHz optical bandwidth light emitting transistor
Journal
Applied Physics Letters
Journal Volume
94
Journal Issue
24
Date Issued
2009
Author(s)
Abstract
We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, Β (= Δ IC /Δ IB ) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that "fast" spontaneous recombination can be harnessed for high-speed modulation. © 2009 American Institute of Physics.
SDGs
Type
journal article