Low Interface Trap Density 4H-SiC MIS Structure With SiO2 Grown by Sub-1000 ◦C Intermittent Spray Hydrated Oxidation (ISHO) for UV Sensor Applications
Journal
IEEE Transactions on Electron Devices
Start Page
1
End Page
7
ISSN
0018-9383
1557-9646
Date Issued
2024
Author(s)
Wei-Chi Liao
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Type
journal article