Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance

Resource

Applied Physics Letters 88 (19): 193506

Journal

Applied Physics Letters

Journal Volume

88

Journal Issue

19

Pages

-

Date Issued

2006

Date

2006

Author(s)

Shi, J.-W.

Chiu, P.-H.

Huang, F.-H.

Wu, Y.-S.

Lu, Ja-Yu

Sun, C.-K.

Liu, C.-W.

Chen, P.-S.

URI

Type

journal article

File(s)

Name

69.pdf

Size

212.6 KB

Format

Adobe PDF

Checksum

(MD5):44d8075f3247dbef4745272acceadd0b