Atomic Layer Deposition of Nano-laminated Films for use as Flexible and Stretchable Gas Barrier, Dielectrics, and Conductors
Date Issued
2016
Date
2016
Author(s)
Tseng, Ming-Hung
Abstract
In this dissertation, we used atomic layer deposition (ALD) and molecular deposition technology (MLD) to fabricate flexible and stretchable gas barrier films, and the gas barrier performances were optimized by regulating surface morphology, changing oxidant, adding organic material, and the WVTR of the optimized gas barrier met the requirement for OLED encapsulation (10-6 g m -2 day-1). We discovered that adjusting deposition temperature and thickness could optimize the surface morphology. The films with smooth morphology had low gas permeation rate, and improved ability of barrier and flexibility and stretchability of nano-laminated films. The hydrogen peroxide (H2O2) was used to reduce deposition temperature. The gas barrier by using H2O2 had higher films quality and gas barrier. The low deposition temperature not only prevented thermal degradation but also improved the performance of OLED. The ALD encapsulated OLED was comparable with that encapsulated using a thin glass cover. Finally, we optimized the process of dealloying and ALD process. Compared with other supercapacitor with same dielectric material, the supercapacitors by using nanoporous silver had the highest capacitance.
Subjects
atomic layer deposition
thin-film encapsulation
flexible encapsulation
stretchable encapsulation
supercapacitor
Type
thesis
File(s)
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ntu-105-D99527015-1.pdf
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23.54 KB
Format
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