Fabrication of sub-quarter-micron grating patterns by employing DUV holographic lithography
Journal
Microelectronic Engineering
Journal Volume
46
Journal Issue
1
Pages
173-177
Date Issued
1999-05
Author(s)
Abstract
Sub-quarter-micron grating patterns with period as fine as 0.22 μm have been obtained by combining DUV holographic lithography and silylation technique for the first time. A traditional chemical amplified resist (JSR KRF/K2G) originally working for single layer process at 248 nm wavelength was used for silylation. The silylation selectivity was improved by process control and a photoresist pattern with an aspect ration of 4 was obtained.
Type
journal article