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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
Details
Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics
Journal
Journal of Applied Physics
Journal Volume
82
Journal Issue
9
Pages
4558-4565
Date Issued
1997
Author(s)
CHEE-WEE LIU
Liu, C.W.
Sturm, J.C.
CHEE-WEE LIU
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0001627677&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/332400
Type
journal article
