Growth of SiCN crystals consisting of a predominantly carbon nitride network
Journal
Materials Research Society Symposium - Proceedings
Journal Volume
441
Pages
693-698
Date Issued
1997
Author(s)
Abstract
We report here growth of thin films of Si-containing crystalline carbon-nitride by microwave plasma assisted CVD. The chemical composition of these films has been observed to be a strong function of the substrate temperature. A significant incorporation of Si into the CN network occurs for substrate temperatures exceeding 1000 C. XPS analyses of these films indicate a multiple bonding structure between carbon and nitrogen and also indicate that a majority of the carbon atoms are tetrahedrally coordinated and covalently bonded with nitrogen. Investigations of the growth rate as a function of various deposition parameters revealed that Si substrates exhibit weight loss rather than deposition, suggesting that abstraction of Si atoms from the substrate surface by the chemically active radicals from the plasma is a dominant process. The species thus formed, i.e., the active radicals bonded with Si, appear to facilitate the subsequent reactions in the gas phase. A major achievement of this study is that there is no obvious deposition of any amorphous CN material.
Other Subjects
Chemical bonds;Chemical vapor deposition;Composition effects;Crystal growth;Crystalline materials;Film growth;Free radical reactions;Molecular structure;Nitrides;Semiconducting silicon compounds;Thermal effects;X ray photoelectron spectroscopy;Carbon nitride;Microwave plasma assisted chemical vapor deposition;Thin films
Type
conference paper