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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The Characteristics of Silane Doping of GaAs by MOCVD
Details
The Characteristics of Silane Doping of GaAs by MOCVD
Resource
13th EDMS, p.77-80
Journal
13th EDMS
Pages
77-80
Date Issued
1987
Date
1987
Author(s)
劉志文
Chen, S. L.
Lay, J. P.
李嗣涔
林浩雄
Lin, Hao-Hsiung
URI
http://ntur.lib.ntu.edu.tw//handle/246246/121624
Type
conference paper