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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy
Details
High-performance In0.49Ga0.51P/GaAs tunneling emitter bipolar transistor grown by gas source molecular beam epitaxy
Journal
Conference on Solid State Devices and Materials
Pages
316-318
Date Issued
1992
Author(s)
Wu, C.C.
Lu, S.S.
Lee, S.C.
Williamson, F.
Nathan, M.I.
SHEY-SHI LU
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-0026970514&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/298343
Type
conference paper