A high-efficiency 94-GHz 0.15-μm InGaAs/InAlAs/InP monolithic power HEMT amplifier
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
6
Journal Issue
10
Pages
366-368
Date Issued
1996
Author(s)
Lai, R.
Ng, G.I.
Lo, D.C.W.
Block, T.
Wang, H.
Biedenbender, M.
Streit, D.C.
Liu, P.H.
Dia, R.M.
Lin, E.W.
Yen, H.C.
Abstract
We report high efficiency W-band power monolithic microwave integrated circuits (MMIC's) using passivated 0.15 μm gate length In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. A 0.15 μm×320 μm single stage InP power HEMT MMIC amplifier demonstrates a maximum power added efficiency of 23% with 40 mW output power and 4.9 dB power gain at 94 GHz. When biased for higher output power, 54 mW output power with 20% power added efficiency was achieved at 94 GHz. These results represent the best combination of efficiency and output power fixtured data reported to date at this frequency.
SDGs
Type
journal article