The Origin of Instability in Metal/SiO2/InSb MOS Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
1107
Pages
176-187
Date Issued
1989
Author(s)
Abstract
The AuCriSiO2/InSb Metal-Oxide-Semiconductor capacitor was fabricated using photo-enhanced chemical vapor deposition. The electrical and structural properties were analyzed by capacitance-voltage and Auger electron spectroscopy , respectively. The high frequency (1 MHz) capacitance-voltage measurements were usually performed after positive or negative bias-temperature stressing. Both the flat-band voltage shift and the change of hysteresis of capacitance-voltage curve indicate the existence of enormous negative mobile charges in the bulk SiO2. Auger depth profile reveals that these negative mobile charges are metallic indium and antimony ions.
Type
journal article